Book Review: RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors
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Despite the extremely “chewy” title, this is another great book from SciTech Publishing. In a world where wireless capability is being dropped into nearly every consumer and industrial device, readers can greatly benefit from the beefy introduction to microwave and RF signal modeling and measurement techniques used during computer aided design (CAD). If you are wondering if it will quickly diverge over your head, rest assured that it assumes as a ‘prerequisite’ a basic knowledge in electronic circuits.

With that said, let’s dive into this new book. Published in 2010, this text was written by Jianjun Gao. The first two chapters introduce semiconductors used in RF and microwave design as well as how to represent two and three port networks.
These are really helpful chapters, but my favorite is chapter 3, which covers microwave and RF measurement techniques. Recognizing how the tiniest error can have devastating impacts on performance, RF and microwave designers have long held to the importance of highly accurate measurements, demanding the very best of the test equipment manufacturers. While it is broad in scope, this chapter pays particular attention measurements in the frequency domain, particularly S-parameters measurement technique, noise measurement technique, and nonlinear measurement technique. The text includes detailed drawings of test set ups, including what types of cables to use as well as how to calibrate out error introduced by the cable, fixture, and instrumentation.
Chapters 4-7 cover advanced measurement concepts, including: FET small-signal modeling and parameter extraction, FET nonlinear modeling and parameter extraction, Microwave noise modeling and parameter extraction technique for FETs, artificial neural network modeling technique for FET.
If you are interested in adding this book to you shelf, you can find out more here.
It’s priced at $87 and available on the web at SciTech Publishing.
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